| The Semion Single Sensor used in Plasma Etching applications |
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Ion flux and ion distribution function measurements in synchronously pulsed inductively coupled plasmasAbstractPulsed inductively coupled plasmas (ICPs) have recently attracted considerable interest in the field of integrated circuit fabrication. This is because pulsing provides more flexibility for tuning an etch process by bringing in new reactor control parameters: the pulsing frequency, the duty cycle of the pulses, and the phase between the ICP pulses and the bias pulses. Recent experiments have shown that the duty cycle has a strong influence on plasma chemistry. In this study, the authors look at the impact of the duty cycle on the time variations of the ion flux and on the time-averaged ion distribution function measured at the wafer surface in an ICP-processing chamber subject to pulse modulation of source excitation and bias at 1kHz, in several plasma chemistries. |
Semion and Langmuir Probe systems used to study the SiO2 sputter etch rate in RF-Biased ICP discharge.AbstractInductively coupled plasmas (ICPs) with radiofrequency (RF) biased pedestals are commonly used in the semiconductor industry for nanoscale etch and deposition processes. In this study, the authors investigate the sputter etch rate of SiO2 in this type of reactor as a function of ICP and RF-bias power. The key parameters measured were the ion energy distribution (IED), ion flux and sputter etch rate. |
| The Semion Single Sensor used in HiPIMS Plasma applications |
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Plasma diagnostics of low-pressure high-power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasmaAbstractThe study focused on the plasma measurement of parameters to explore the assistance of the electron cyclotron wave resonance (ECWR) on the evolution of HiPIMS discharge, where it has several benefits.
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Semion retarding field energy analyzer used to investigate reactive HiPIMS + MF sputtering of TiO₂ crystalline thin filmsAbstractHigh-power impulse magnetron sputtering (HiPIMS) systems have been previously studied with mid-frequency (MF) plasma excitation, utilizing the “off” period to enhance the deposition rate, decrease the working pressure, and improve HiPIMS plasma generation. Our latest application note looks at the time-resolved ion velocity distribution function (IVDF) in a high-power pulse plasma in three modes of excitation: pure HiPIMS, medium-frequency pulsed bipolar (MF 350 kHz) and hybrid pulsed HiPIMS + MF. |
Semion Retarding Field Energy Analyser (RFEA) used in a study to form Ti–Cu thin films with regard to controlling the copper releaseAbstractSerious complications in orthopaedic surgery include aseptic loosening and infection of artificial implants. A number of studies have looked at ways to reduce these complications, and copper has been found to be one of the most promising metal ions for deposition applications because of its lower toxicity and higher cytocompatibility. Various studies have shown that sufficient (about 5 mmol/l) copper release over at least several days is needed to inhibit and then kill all bacteria. This study aimed to prepare Ti–Cu film with strong initial antimicrobial and cytotoxic effect, followed by long-lasting but moderate copper release using HiPIMS-based systems. |
Semion used in a study of the effect of mid-frequency discharge assistance on dual-high power impulse magnetron sputteringAbstractThis study introduces a hybrid-dual-HiPIMS system based on the simultaneous combination of dual-HiPIMS and MF discharges. The main body of the study is the time-resolved diagnostics taken using a Semion System during the deposition of Ti–Cu films, revealing the degree of assistance made by the MF discharge. |
| The Semion Single Sensor used in Ion Beam Plasma applications |
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| Coming soon |
| The Semion Single Sensor used in PECVD applications |
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Ion energy distributions in bipolar pulsed DC discharges of methane measured at the biased cathodeAbstractIon processes at the growing surface of a depositing film are of huge importance in the achievement of special surface properties. The study of plasma processes at the sheath level complements the characterisation performed by other methods, and it provides a better assessment of the influence of deposition variables on material properties. Compact models of retarding field energy analysers (RFEA) are becoming popular instruments for measuring ion currents due to their rapid installation, high sensitivity to small currents and because no auxiliary pump is needed. |
| The Semion Single Sensor used in Space Plasma applications |
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| Coming soon |
| The Semion Single Sensor used in Plasma Sputtering applications |
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Ion energy distribution measurements in RF and pulsed DC plasma dischargesAbstractThe energy and flux of bombarding ions play a vital role in the etching and deposition of layers on the substrate surface. Asymmetric radio-frequency (RF) capacitively coupled plasma (CCP) reactors are commonly used for plasma etching. Monitoring of the flux and energy of ions arriving at the substrate in these reactors is essential for process optimization and the control of films’ microstructure. This study used a commercial retarding field energy analyser (RFEA), the Semion System from Impedans Ltd, to measure the ion energy distribution functions (IEDFs) of impacting ions at the powered electrode in a 13.56MHz driven, capacitively coupled, parallel plate discharge operated at low pressure.
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SE02: Ion flux and ion distribution function measurements in synchronously pulsed inductively coupled plasmas