Semion RFEA and Langmuir Probe Application Note

In this study, the authors investigate the sputter etch rate of SiO2 in this type of reactor as a function of ICP and RF-bias power. The key parameters measured were the ion energy distribution (IED), ion flux and sputter etch rate. It is well known that ion bombardment of the wafer is a key driver of the etch process. To continue reading, click here.