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Application Notes Applications Fundamental Research Octiv Mono 2.0 Octiv Poly 2.0 Octiv Suite 2.0 Process Performance

Bias potential measurement with Octiv VI probe during atomic layer etching of SiO2 and Si3N4 with Low Global Warming C4H3F7O Isomers

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Application Notes Langmuir Probe Model Validation Process Performance Semion 2500 V4

Impedans’ Semion and Langmuir Probe systems used to study the SiO2 sputter etch rate in RF-Biased ICP discharge

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Application Notes Process Performance Semion 2500 V4

Semion retarding field energy analyzer used to investigate reactive HiPIMS + MF sputtering of TiO2 crystalline thin films

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Application Notes Langmuir Probe Process Performance Semion 2500 V4 Semion 3KV Semion pDC

Semion RFEA used for Ion energy distribution measurements in RF and pulsed DC plasma discharges

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Application Notes Process Performance Semion 2500 V4

Using Impedans Semion RFEA System to measure the effect of gas pressure on Ion Energy in a very-high frequency (VHF) magnetron sputtering discharge.

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Application Notes Octiv Suite 2.0 Process Performance Semion 2500 V4

Effect of substrate biasing on the ion properties of a magnetron sputtering system using Impedans’ Semion RFEA System and Octiv Suite 2.0 VI Probe

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Application Notes Process Performance Semion 2500 V4

The effect of driving frequency on the IVDF in a magnetron sputtering system using Impedans’ Semion RFEA System

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Application Notes Process Performance Vertex

Ion angular distribution measurement with a planar retarding field analyzer

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Application Notes Process Performance Semion 2500 V4

Ion flux and energy measurement using Impedans Semion system in silicon etching with a pulsed HBr/O2 plasma.

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Application Notes Process Performance

Ion velocity distribution measurement through high-aspect ratio holes using the Semion system

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Application Notes Process Performance Vertex

Ion energy and ion flux measurements through high-aspect ratio holes using the Vertex system

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Application Notes Process Performance Quantum

Measurement of deposition rates and ion energy distributions using the Quantum System