News

Wishing you and your family Happy Holidays from all of us at Impedans. Our office is closed Monday 24th of December and business will resume as usual on Wednesday 2nd of January.

Wishing you a Happy Easter from all of us at Impedans. Our office is closed Monday 2nd of April for Easter holiday. Business will resume as usual on Tuesday 3rd of April.

Impedans founder presents at Plasma Supervision workshop.

Impedans founder and CEO, Mike Hopkins, is presenting a talk on VI Technology at the Plasma Supervision workshop during the (apc|m) Conference at the Gibson Hotel, Dublin on the 10th of April 2017. The European Advanced Process Control and Manufacturing (apc|m) Conference is directed to manufacturers, suppliers and scientific community of semiconductor, photovoltaic, LED, flat panel, MEMS, and other related industries. The topics are focused on current challenges and future needs of Advanced Process Control and Manufacturing Effectiveness.

More information can be found on the conference can be found here.

Impedans are proud to support their female employees on International Women's Day and every other day..

IWD is a celebration of the achievements of women in all aspects of life. This day has been adopted to bring gender equality to the fore and to recognise the contribution of women in our society. There have been leaps and bounds but we're not there yet. Employers play a vital role in empowering women. At Impedans, flexible working hours are offered to their employees, helping working mums balance career and family goals. Getting the balance in teams is vital to the health of any organisation. #BeBoldForChange

Measurement of deposition rates and ion energy distributions using the Quantum system

Learn how metal deposition rates, ionization fraction and energy distribution of ions arriving at a substrate are measured in an asymmetric, bipolar, pulsed DC magnetron sputtering reactor.

Industrial Communication Protocols

Learn about communication protocols and how the Industrial Octiv has been developed to enable fast, reliable, scalable, real-time communication of measurements through ethernet networks.  

Octiv VI Probe Technology - Standards of Calibration

Octiv VI Probe Technology - Standards of Calibration

Abstract

This technical note describes the uncertainty in measurements and standards of calibration for Octiv VI Probe technology. High power radio-frequency (RF) voltage and current sensors need to be accurately calibrated to a traceable standard. Calibrating to high accuracy can be the most challenging aspect of high power, voltage-current sensor (VI probe) manufacture. This is due to the many sources of error in any calibration process. If the calibration is performed accurately and correctly, then most errors can be characterized and removed.

Learn more about our Octiv system here

Octiv VI Probe Technology - Theory of Operation

Octiv VI Probe Technology - Voltage | Current | Phase | Impedance

Abstract

This technical note describes the theory and architecture behind Octiv VI Probe technology. The Octiv VI probe is an advanced RF voltage and current sensor, which can provide real-time information on complex loads. Real-time information the Octiv provides includes voltage, current, phase, power and impedance on all harmonics of a chosen frequency simultaneously, as well as transmission line parameters such as forward power, reflected power, standing wave ratio (SWR) and reflection coefficient. The Octiv sensor was designed to meet the need for post-match voltage and current measurements in RF excited plasma processes.

Learn more about our Octiv system here

Ion angular distribution measurements with a planar retarding field analyser

The Vertex Multi Sensor measures the ion energy distribution as a function of aspect ratio hitting a surface inside a plasma reactor from multiple locations to analyse the uniformity of ion interactions across a substrate.

Abstract

In this application note, we present a novel method which can be applied to a planar retarding field energy analyser (RFEA) for the measurement of ion angular distributions. Ion energy and angular ion distributions play a critical role in plasma assisted etching and conformal deposition processes. Ion impact at wider angles may be required for better step coverage in certain sputter deposition and ion implantation processes while large angle ion impact can be detrimental to anisotropic etch processes. In the early 80’s, Stenzel et al 1, 2 developed a directional RFEA where particles are geometrically filtered through a micro-capillary plate prior to energy analysis. The high aspect ratio (AR) of the holes/channels in the plate allowed them to select particles within a geometric acceptance angle. The Vertex RFEA design has a variable AR, controlled using a potential difference between two grids (see application note VE02). A variable AR controls the ion angular spread passing through the sensor for detection. The Vertex product produces a plot of ion energy distribution versus AR.

Learn more about our Vertex system here

Ion energy and ion flux measurements through high-aspect ratio holes using the Vertex system

The Vertex Multi Sensor measures the ion energy distribution as a function of aspect ratio hitting a surface inside a plasma reactor from multiple locations to analyse the uniformity of ion interactions across a substrate.

Abstract

High aspect ratio (AR) etching is a key process in integrated circuit (IC) fabrication. The manufacture of a 3D NAND memory stack requires structures with an AR > 50 to be created. The key challenge is to create bow-free, straight profiles with minimal twisting. Transport of ions and neutrals to the bottom of these structures can be limited by sidewall shadowing. In particular, ion bombardment of feature sidewalls complicates etching profile control while ion loss to the sidewall reduces ion flux to the bottom of the feature. Only ions with a relatively narrow angular spread, relative to normal incidence, will reach the bottom of high AR features. Ions are accelerated toward the substrate by the sheath electric field perpendicular to the substrate surface. However, ions have some thermal velocity when entering the sheath and therefore have an energy component parallel to the substrate surface. The ratio of the perpendicular to parallel components of the ion energy vector determines the angular distribution.

Learn more about our Vertex system here